Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-26
2007-06-26
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S311000, C438S637000, C438S648000, C438S656000, C257SE21170, C257SE21168, C257SE21304
Reexamination Certificate
active
11251180
ABSTRACT:
Provided is a method of manufacturing a semiconductor device with enhanced electrical characteristics. The method includes disposing a substrate on a substrate support in a process chamber, pre-heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 60 seconds or more, forming a silicon protective layer on the substrate by supplying a silicon source gas into the process chamber and heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 10 seconds or more, and forming a tungsten layer on the silicon protective layer.
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Hampp Roland
Kwak Jun-keun
F. Chau & Associates LLC
Infineon Technology North America Corp.
Nhu David
Samsung Electronics Co,. Ltd.
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