Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-05-29

2007-05-29

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S706000, C257SE21019, C257SE21648, C257SE21649, C257SE21119

Reexamination Certificate

active

11120531

ABSTRACT:
The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.

REFERENCES:
patent: 6071783 (2000-06-01), Liang et al.
patent: 6350993 (2002-02-01), Chu et al.
patent: 6599437 (2003-07-01), Yauw et al.
patent: 6794230 (2004-09-01), Huang et al.
patent: 7018930 (2006-03-01), Lee et al.
patent: 2001/0034136 (2001-10-01), Kim et al.
patent: 2006/0081875 (2006-04-01), Lin et al.

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