Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-10-03

2006-10-03

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07115475

ABSTRACT:
A method of manufacturing a semiconductor device in which a trench groove is formed in a first conductivity type semiconductor layer, and a second conductivity type semiconductor layer is epitaxially grown so as to bury the trench groove. The second conductivity type semiconductor layer is then removed until a surface of the first conductivity type semiconductor layer is exposed. The first conductivity type semiconductor layer is epitaxially grown on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer such that the thickness of the first conductivity type semiconductor layer increases by a length which is substantially the same as a depth of the trench groove. The first conductivity type semiconductor layer is selectively removed such that the second conductivity type semiconductor layer is exposed, and the epitaxially growing of the second conductivity type semiconductor layer is repeated through selectively removing the first conductivity type semiconductor layer.

REFERENCES:
patent: 6475864 (2002-11-01), Sato et al.
patent: 2005/0098826 (2005-05-01), Yamaguchi et al.
U.S. Appl. No. 11/358,411, filed Feb. 22, 2006, Saito, et al.
U.S. Appl. No. 11/363,047, filed Feb. 28, 2006, Saito, et al.

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