Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-12-26

2006-12-26

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S624000, C438S622000, C438S644000, C257SE21162, C257SE21576

Reexamination Certificate

active

07153735

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film9, 10above a semiconductor substrate1; forming a capacitor Q having a lower electrode11a, a dielectric film13a, and an upper electrode14con the first insulating film9, 10; forming a second insulating film15, 15a,16coating the capacitor Q; and forming a stress-controlling insulating film30on the rear surface of the semiconductor substrate1after the second insulating film15, 15a,16have been formed.

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Chinese Office Action dated Aug. 25, 2006, issued in corresponding Chinese Patent Application No. 028294734.

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