Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-05-16

2006-05-16

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S247000, C438S389000, C438S558000

Reexamination Certificate

active

07045417

ABSTRACT:
A method of manufacturing a semiconductor device, which comprises forming a first semiconductor film on a surface of a semiconductor substrate, adsorbing a first impurity on a surface of the first semiconductor film, adsorbing a second impurity on the surface of the first semiconductor film, forming a second semiconductor film on the surface of the first semiconductor film, and solid-phase-diffusing the first impurity and the second impurity into a region of the semiconductor substrate which is located adjacent to the first and second semiconductor films to thereby form a first diffusion region containing the first impurity and a second diffusion region containing the second impurity, a concentration of the first impurity in the first diffusion region being higher than that of the second impurity in the second diffusion region, and the first diffusion region having the bottom thereof covered by the second diffusion region.

REFERENCES:
patent: 5360758 (1994-11-01), Bronner et al.
patent: 6110792 (2000-08-01), Bronner et al.
patent: 6372589 (2002-04-01), Yu

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