Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-07-18

2006-07-18

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S900000, C257SE21626, C257SE21640

Reexamination Certificate

active

07078287

ABSTRACT:
A gate electrode is formed on a silicon substrate. First spacers are formed on side surfaces of the gate electrode. With the gate electrode and the first spacers as masks, the surface of the silicon substrate is chipped off to form steplike portions at positions adjacent to base portions of the first spacers. Second spacers are formed at the steplike portions. Silicides are formed on the silicon substrate with the first spacers and the second spacers as masks.

REFERENCES:
patent: 5899720 (1999-05-01), Mikagi
patent: 6372673 (2002-04-01), Besser et al.
patent: 6417056 (2002-07-01), Quek et al.
patent: 6893980 (2005-05-01), Akasaka et al.
patent: 2003/0181028 (2003-09-01), Yeap et al.
patent: 8-186085 (1996-07-01), None
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Second Edition, 2000, Lattice Press, pp. 438 and 483.

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