Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-09-12

2006-09-12

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S458000, C438S508000

Reexamination Certificate

active

07105423

ABSTRACT:
A method of manufacturing a semiconductor device having a build-up layer for wiring between semiconductor elements and external connection terminals is disclosed. The method comprises steps of forming a rewiring layer on a wafer, placing the wafer on a stretchable dicing tape, dicing the wafer placed on the dicing tape, forming a clearance between adjacent semiconductor elements by stretching the dicing tape, forming a semiconductor device continuous body by forming a build-up layer on the semiconductor elements and the clearance, and forming semiconductor devices by dicing the semiconductor device continuous body.

REFERENCES:
patent: 6451671 (2002-09-01), Yamada
patent: 2002-016173 (2002-01-01), None

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