Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-12-27
2005-12-27
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
Reexamination Certificate
active
06979633
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, which prevents a contact resistance due to a native oxide film from being increased. Semiconductor substrate on which a lower structure having a junction region is formed is prepared. Interlayer dielectric film is formed over a whole surface of semiconductor substrate. Contact hole exposing the junction region is formed by etching interlayer dielectric film. Dry-cleaning and wet-cleaning for a substrate surface exposed by the contact hole are sequentially performed. Washed contact surface is preliminarily treated under reducing gas atmosphere to remove a native oxide film formed on contact surface. Impurity is additionally doped to a surface of the junction region in-situ so that impurity damages on preliminary-treated contact surface are compensated for. Conductive film is deposited on the contact hole and the interlayer dielectric film in-situ.
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Kim Il Wook
Lee Seok Kiu
Harrison Monica D.
Hynix / Semiconductor Inc.
Jr. Carl Whitehead
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