Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-23
2005-08-23
Eckert, George (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S266000
Reexamination Certificate
active
06933197
ABSTRACT:
A non-volatile memory cell and a high voltage MOS transistor on the same semiconductor chip without changing the characteristic of the non-volatile memory cell. A gate insulating film of a MOS transistor is formed using the steps of forming an oxide film12formed on a floating gate14of a split-gate type non-volatile memory cell and of forming a tunneling insulating film16formed on the floating gate14and the oxide film12. The gate insulating film13of the MOS transistor is formed by a stacked layer of the oxide film12and tunneling insulating film16. Thus, the quantity of heat treatment in the entire production process undergoes no change, and the optimized characteristic of the non-volatile memory undergoes no change.
REFERENCES:
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5656522 (1997-08-01), Komori et al.
patent: 5856221 (1999-01-01), Clementi et al.
patent: 5879993 (1999-03-01), Chien et al.
patent: 6165845 (2000-12-01), Hsieh et al.
patent: 6365459 (2002-04-01), Leu
patent: 0305741 (1989-03-01), None
patent: 0454051 (1991-10-01), None
patent: 03-009572 (1991-01-01), None
patent: 11-68070 (1999-03-01), None
patent: 11-068070 (1999-03-01), None
Eckert George
Fish & Richardson P.C.
Richards N. Drew
Sanyo Electric Co,. Ltd.
LandOfFree
Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3501964