Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S321000

Reexamination Certificate

active

06974747

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. After an undoped amorphous silicon layer is formed, it is crystallized by means of a spike rapid thermal process so that the grain growth of a small size is facilitated. Therefore, while the grain size is formed uniformly and small, a grain cross-section of the small size, as a columnar structure, induces crystals grown in a direction perpendicular to the interface. It is therefore possible to reduce the surface roughness and accomplish an electrically uniform characteristic over the entire area.

REFERENCES:
patent: 5597760 (1997-01-01), Hirota
patent: 6066872 (2000-05-01), Okada et al.
patent: 6090666 (2000-07-01), Ueda et al.
patent: 2004/0102005 (2004-05-01), Dong et al.
patent: 1998-55759 (1998-09-01), None
patent: 2000-41393 (2000-07-01), None

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