Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2005-02-01
2005-02-01
Deo, Duy-Vu N. (Department: 1765)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001200, C134S001300, C438S723000, C438S724000, C438S725000
Reexamination Certificate
active
06848454
ABSTRACT:
A method of manufacturing a semiconductor device including a first step of depositing a first film and a second film on a conductive layer in this order and etching a desired portion of the second film with a first etching gas until the first film is exposed, the first film being made of one of a silicon nitride film and a silicon nitride oxide film, the second film being made of a silicon oxide film, a second step of removing a reaction product deposited on the first film through the first step with a second etching gas to expose the first film, a third step of etching the first film exposed through the second step with a third etching gas until the conductive layer is exposed and a fourth step of removing a reaction product deposited on the conductive layer through the third step with a fourth etching gas, thereby forming a concave portion penetrating the first and second films to reach the conductive layer surface.
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Patent Abstracts of Japan Unexamined Patent Publication No. HEI 10 (1998)-256232, published Sep. 25, 1998.
Hirohama Kazuhiro
Umemoto Takeshi
Deo Duy-Vu N.
Nixon & Vanderhye P.C.
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