Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-06-21

2005-06-21

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S294000, C438S296000, C438S302000, C438S305000, C438S306000

Reexamination Certificate

active

06908820

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. A plurality of device separation regions are formed in an SOI layer of an SOI substrate, a desired impurity is implanted into a body portion of an Si active layer region, and therereafter a gate electrode is formed with a gate insulation film therebetween. Thereafter, an impurity is implanted into the Si active layer region to form extension portions of source/drain portions, and then an impurity different in polarity from the impurity in the source/drain portions is halo-implanted to form a reverse-characteristic layer. In the halo implantation, the range of projection is set to reach the inside of a buried oxide film. With this configuration, in a fully depleted SOI-MOSFET or the like provided with a thin film SOI layer, it is made possible to simultaneously achieve an improvement of roll-off characteristic and a reduction in parasitic resistance and to secure a sufficient driving capability.

REFERENCES:
patent: 6445016 (2002-09-01), An et al.

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