Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-10-04

2005-10-04

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000

Reexamination Certificate

active

06951788

ABSTRACT:
There is provided a semiconductor device manufacturing method which comprises a step of forming titanium silicide layers (conductive patterns) on a silicon substrate (semiconductor substrate), a step of forming a cover insulating film (underlying insulating film), a step of forming a laminated film containing an alumina film (metal oxide film) on the cover insulating film, a first etching step of forming first holes in the laminated film by etching the laminated film, a cleaning step of cleaning the first holes, and a second etching step of forming second holes in the cover insulating film by etching the cover insulating film via the first holes under second etching conditions after the cleaning step.

REFERENCES:
patent: 5416042 (1995-05-01), Beach et al.
patent: 6469333 (2002-10-01), Takai et al.
patent: 6579753 (2003-06-01), Yamanobe
patent: 6-290984 (1994-10-01), None
patent: 3056973 (2000-04-01), None
patent: 2001-44375 (2001-02-01), None

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