Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-05-31

2005-05-31

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S514000, C438S530000, C438S542000, C438S627000, C438S643000, C438S648000, C438S653000, C438S656000, C438S658000, C438S659000, C438S660000, C438S687000, C438S688000

Reexamination Certificate

active

06900131

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device, which is capable of reducing variations in the rate of occurrence of failures at individual connecting portions in the semiconductor device. According to the semiconductor device manufacturing method, a Cu-containing TiN layer, which serves as a cap layer (130(310)), is formed using a Cu-containing Ti target. Cu contained in the Cu-containing TiN layer is diffused into an Al—Cu wiring (120(320)) located in a portion electrically connected to an interlayer wiring (200) by heat treatment.

REFERENCES:
patent: 6583070 (2003-06-01), Tsui et al.
patent: 2003/0008495 (2003-01-01), Hsue et al.
patent: 2004/0150109 (2004-08-01), Ahn et al.
patent: 05-065640 (1993-03-01), None
patent: 08-306690 (1996-11-01), None

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