Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-29
2005-03-29
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S306000, C438S232000, C438S525000, C438S527000, C438S914000, C438S961000
Reexamination Certificate
active
06872628
ABSTRACT:
A gate structure (4), an LDD region (6) and a sidewall (7) are provided in this order. Arsenic ions (8) are thereafter implanted into the upper surface of a silicon substrate (1) by tilted implantation. The next step is annealing for forming an MDD region (9) in the upper surface of the silicon substrate (1). The MDD region (9) and the gate structure (4) do not overlap one another in plan view. Further, the MDD region (9) formed into a depth shallower than that of the LDD region (6) is higher in concentration than the LDD region (6). Thereafter a source/drain region (11) higher in concentration than the MDD region (9) is provided by vertical implantation into a depth greater than that of the LDD region (6).
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Masaaki Kinugawa, et al., “Submicron MLDD NMOSFETS for 5V Operation”, Semiconductor Device Engineering Laboratory, Toshiba Corporation, VLSI Tech. Sympo. '85, pp. 116-117.
Nishida Yukio
Shirahata Masayoshi
Fourson George
Garcia Joannie Adelle
Renesas Technology Corp.
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