Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C257S304000, C257S315000

Reexamination Certificate

active

07316955

ABSTRACT:
A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can be reduced while maintaining the overlap area between the control gate and the floating gate. Therefore, inter-cell interference can be reduced without lowering program speed.

REFERENCES:
patent: 2004/0183121 (2004-09-01), Yeh et al.
patent: 2005/0085039 (2005-04-01), Yasui et al.
patent: 1999-0048778 (1999-07-01), None
patent: 2000-0003055 (2000-01-01), None
patent: 2003-0065864 (2003-08-01), None

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