Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-04-22

2008-04-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000, C438S431000

Reexamination Certificate

active

07361562

ABSTRACT:
Provided is a method of manufacturing a semiconductor device capable of forming a thin high-quality gate oxide layer by suppressing occurrence of recoiled oxygen due to ion implanting. The method of manufacturing a semiconductor device includes steps of: removing an oxide layer from a semiconductor substrate; forming a well region in the substrate by performing a first ion implanting process; removing a native oxide layer from the substrate; adjusting a threshold voltage by performing a second ion implanting process on the substrate; and forming a gate oxide layer on the substrate.

REFERENCES:
patent: 6248618 (2001-06-01), Quek et al.
patent: 6294416 (2001-09-01), Wu
patent: 6376318 (2002-04-01), Lee et al.
patent: 6677212 (2004-01-01), Yoshioka et al.
patent: 6933214 (2005-08-01), Kwak
patent: 2002/0055220 (2002-05-01), Soderbarg et al.
patent: 2003/0119263 (2003-06-01), Lee et al.

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