Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-06-07

2011-06-07

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S683000, C438S686000, C257S384000, C257SE21634

Reexamination Certificate

active

07955925

ABSTRACT:
After gate insulating films, gate electrodes, and n+type semiconductor regions and p+type semiconductor regions for source/drain are formed, a metal film and a barrier film are formed on a semiconductor substrate. And a first heat treatment is performed so as to make the metal film react with the gate electrodes, the n+type semiconductor region, and the p+type semiconductor region, thereby forming a metal silicide layer formed of a monosilicide of a metal element forming the metal film. After that, the barrier film and the unreacted metal film are removed, and then a second heat treatment is performed to stabilize the metal silicide layer. The heat treatment temperature is made lower than a temperature at which a lattice size of a disilicide of the metal element and that of the semiconductor substrate become same.

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Chinese Office Action received in Chinese App. No. 200810109647.2 (and English translation).

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