Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-05-17

2011-05-17

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S680000, C438S706000, C438S745000, C438S954000, C257SE21170, C257SE21058, C257SE21229, C257SE21267, C257SE21645, C257SE21646

Reexamination Certificate

active

07943495

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. The method includes forming an oxide-nitride-oxide (ONO) layer over a semiconductor substrate, and forming a recess over the semiconductor substrate by etching the ONO layer, forming a vertical structure pattern being higher than the ONO layer over the recess, sequentially forming a spacer oxide film and a first gate poly over the side wall of the vertical structure pattern, and forming a nitride film spacer at a partial region of the side wall of the first gate poly, removing the nitride film spacer, and forming a second gate poly in a spacer shape over the side wall of the first gate poly, and forming a first split gate and a second split gate, symmetrically divided from each other, by removing the vertical structure pattern.

REFERENCES:
patent: 5270557 (1993-12-01), Schmidt
patent: 5285081 (1994-02-01), Ando
patent: 5453627 (1995-09-01), Aihara et al.

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