Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-03-08

2011-03-08

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S191000, C438S767000, C438S770000, C257S192000, C257SE21407, C257SE21093, C257SE21103

Reexamination Certificate

active

07902025

ABSTRACT:
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

REFERENCES:
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 6002143 (1999-12-01), Terasawa
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 2005/0009255 (2005-01-01), Chiola et al.
patent: 2005/0224838 (2005-10-01), Tanaka et al.
patent: 2006/0060871 (2006-03-01), Beach
patent: 2006/0060917 (2006-03-01), Hayashi et al.
patent: 2006/0068537 (2006-03-01), Hayashi et al.
patent: 2007/0221955 (2007-09-01), Shimoida et al.
patent: 1 587 147 (2005-10-01), None
patent: 1 641 030 (2006-03-01), None
patent: 2003-318398 (2003-11-01), None
patent: 2006-80273 (2006-03-01), None

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