Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-05-10

2011-05-10

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S208000, C438S216000, C438S659000, C438S664000, C257SE21633, C257SE21637, C257SE21639

Reexamination Certificate

active

07939397

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a first semiconductor pattern which is covered with a first insulating film over a first active region, forming a second semiconductor pattern over a second active region, forming a second insulating film over the first insulating film and the first and second semiconductor patterns, forming an opening whose depth reaches the first semiconductor pattern by etching the second insulating film and the first insulating film, forming sidewalls on side surfaces of the second semiconductor pattern by patterning the second insulating film, forming a metal film over the first and second semiconductor patterns respectively, and forming silicide layers by reacting the first and second semiconductor patterns with the metal film.

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