Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-03-01

2011-03-01

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C257SE21419, C257SE21635, C257SE21442

Reexamination Certificate

active

07897464

ABSTRACT:
A method of manufacturing a semiconductor device including a buried insulating film formed in a bottom part of a trench and a buried-type gate electrode formed in the trench, the method including selectively forming an insulating film in the bottom part of the trench, forming a resist having an opening in a part that corresponds to a region where a device isolation insulating film is formed on a surface of a semiconductor substrate after forming the insulating film, and oxidizing the surface of the semiconductor substrate in the opening to form the device isolation insulating film.

REFERENCES:
patent: 5728620 (1998-03-01), Park
patent: 7205208 (2007-04-01), Kim et al.
patent: 2007/0093077 (2007-04-01), Grivna
patent: 2008/0096382 (2008-04-01), Ganitzer et al.
patent: 08-293541 (1996-11-01), None
patent: 2001-284588 (2001-10-01), None

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