Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-02
2011-08-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S271000, C438S191000, C438S767000, C438S770000, C257S192000, C257SE21407, C257SE21093, C257SE21103
Reexamination Certificate
active
07989295
ABSTRACT:
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.
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Hayashi Tetsuya
Hoshi Masakatsu
Shimoida Yoshio
Tanaka Hideaki
Yamagami Shigeharu
Foley & Lardner LLP
Ligai Maria
Nissan Motor Co,. Ltd.
Pham Thanh V
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