Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2011-08-23

2011-08-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C257SE21409

Reexamination Certificate

active

08003472

ABSTRACT:
When transistors having different gate lengths are formed on one substrate and an ESD structure is applied to at least a transistor having longer gate length, a method including: depositing a gate insulating film and a gate electrode material layer on the substrate; forming a first gate electrode having a longer gate length in a first region; forming a first insulating film on a whole surface; forming a second gate electrode including the first insulating film and having a shorter gate length in a second region; forming a second insulating film on a whole surface; forming second sidewalls made of the second insulating film on sidewalls of the second gate electrode; forming first sidewalls made of the first and second insulating films on sidewalls of the first gate electrode; forming a selectively epitaxially grown layer on at least exposed substrate of the first region and implanting ions into the substrate via the selectively epitaxially grown layer, thereby forming an ESD structure.

REFERENCES:
patent: 2002/0192930 (2002-12-01), Rhee et al.
patent: 2007/0090466 (2007-04-01), Park et al.
patent: 2000-049348 (2000-02-01), None
patent: 2003-338542 (2003-11-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656945