Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1993-05-27

1994-07-12

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156904, 430313, 430314, 430323, 430325, 437225, 437228, 437229, H01L 2100

Patent

active

053285603

ABSTRACT:
A method of manufacturing semiconductor devices is provided which is improved so as to form a resist pattern even in a substrate having a step thereon with well controlled dimensional precision, and carry out etching of an underlying substrate with well controlled dimensional precision. An underlying film of an organic substance having the properties of sublimation, photo absorption and insolubility in an organic solvent is formed on a semiconductor substrate. A resist is applied onto the underlying film. Light is selectively irradiated on the resist. The resist is developed to form a resist pattern. The semiconductor substrate is etched with the resist pattern used as a mask.

REFERENCES:
patent: 4529685 (1985-07-01), Borodovsky
patent: 4810619 (1989-03-01), Pampalone et al.
patent: 4826564 (1989-05-01), Desilets et al.
patent: 5100503 (1992-03-01), Allman et al.
patent: 5126289 (1992-06-01), Ziger
patent: 5202061 (1993-04-01), Angelopoulos et al.
"Use of Thin Films of Conjugated Organic Macrocycles as the Active Elements in Toxic-Gas Sensors Operating at Room Temperature", Honeybourne et al., J. Chem. Soc., Faraday Trans. 1, 1984, 80, pp. 851-863.

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