Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1992-01-22

1993-08-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 1566591, 156904, 156665, 437228, 437238, 437245, H01L 21306, C03C 1500, B44C 122, C23F 100

Patent

active

052405540

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.

REFERENCES:
patent: 4620898 (1986-11-01), Banks et al.
patent: 4904338 (1990-02-01), Kozicki
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5102498 (1992-04-01), Itoh et al.
1990 Dry Process Symposium, pp. 105-109, 1990, T. Ohiwa, et al., "SiO.sub.2 Tapered Etching Employing Magnetron Discharge".

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