Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Patent
1997-08-12
1999-03-16
Everhart, Caridad
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
438619, 438622, 438631, H01L 2144
Patent
active
058829636
ABSTRACT:
A method of manufacturing a semiconductor component, wherein capacitances occurring between contacts, interconnects or metallizations are reduced by filling cavities with air or gas is provided. The cavities are produced between the semiconductor material and a passivation layer in a region wherein the interconnects are surrounded by dielectric and are subsequently closed by a further passivation layer.
REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5559055 (1996-09-01), Chang et al.
Felde Andreas Vom
Kerber Martin
Klose Helmut
Everhart Caridad
Siemens Aktiengesellschaft
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