Method of manufacturing semiconductor apparatus

Details Method of manufacturing semiconductor apparatus Method of manufacturing semiconductor apparatus

2011-05-24

2011-05-24

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000, C257SE21429

Reexamination Certificate

active

07947556

ABSTRACT:
A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance.

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Chinese Office Action date Jan. 8, 2010, with English translation.

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