Method of manufacturing semi conductor device

Details Method of manufacturing semi conductor device Method of manufacturing semi conductor device

2006-02-21

2006-02-21

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S258000, C438S261000, C438S266000, C438S287000

Reexamination Certificate

active

07001812

ABSTRACT:
A fabrication method of a semiconductor device which has on the same semiconductor layer a transistor with a different high voltage gate as well as a high voltage drain and an MNOS memory transistor.

REFERENCES:
patent: 5908311 (1999-06-01), Chi et al.
patent: 6448137 (2002-09-01), Lai et al.
patent: 6677200 (2004-01-01), Lee et al.
patent: 6750525 (2004-06-01), Yim et al.

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