Method of manufacturing self-aligned non-volatile memory device

Details Method of manufacturing self-aligned non-volatile memory device Method of manufacturing self-aligned non-volatile memory device

2005-12-06

2005-12-06

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S265000, C438S593000

Reexamination Certificate

active

06972229

ABSTRACT:
A method of forming a self-aligned non-volatile device, includes, in part: forming trench isolation regions, forming a well between the trench isolation, forming a second well above the first well, forming a first oxide layer above a first portion of the second well, forming a first dielectric, a first polysilicon gate, and a second dielectric layer, respectively, above the first polysilicon layer, forming a first spacer above the body region and adjacent the first polysilicon layer, forming a second oxide layer above a second portion of the second well not covered by the first spacer, forming a second polysilicon gate layer above the second oxide layer, the first spacer and a portion of the second dielectric layer, removing the second polysilicon layer and the layers below it that are exposed in a via formed using a mask, thereby forming self-aligned source/drain regions.

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