Method of manufacturing self aligned electrode with field...

Details Method of manufacturing self aligned electrode with field... Method of manufacturing self aligned electrode with field...

2006-01-17

2006-01-17

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S933000, C438S938000, C438S400000

Reexamination Certificate

active

06987065

ABSTRACT:
The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.

REFERENCES:
patent: 5650339 (1997-07-01), Saito et al.
patent: 6150241 (2000-11-01), Deleonibus
patent: 8-213494 (1996-08-01), None
patent: 9-199730 (1997-07-01), None
patent: 10-150204 (1998-06-01), None
patent: 2000-082813 (2000-03-01), None
patent: 2000-514241 (2000-10-01), None

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