Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-29
1999-09-28
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438401, 438975, H01L 218234, H01L 2176
Patent
active
059602864
ABSTRACT:
A method of manufacturing power semiconductor device, having an area of 3 cm.sup.2 or more, comprises the step of preparing a power semiconductor device divided into cell blocks and forming power semiconductor elements whose minimum linewidth is less than 10 .mu.m and having at least main electrodes completed in the cell blocks, the step of determining cell blocks having faulty portions, and the step of selectively electrically separating the main electrodes in the faulty cell blocks from the main electrodes in the good cell blocks.
REFERENCES:
patent: 5780188 (1998-07-01), Rolson
Hasegawa Shigeru
Minami Yoshihiro
Ogura Tsuneo
Sato Shinji
Takenaka Hiroshi
Dutton Brian
Kabushiki Kaisha Toshiba
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