Method of manufacturing photoelectric device

Details Method of manufacturing photoelectric device Method of manufacturing photoelectric device

2011-07-05

2011-07-05

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S964000, C327S102000

Reexamination Certificate

active

07972883

ABSTRACT:
In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

REFERENCES:
patent: 5397350 (1995-03-01), Chow et al.
patent: 6200711 (2001-03-01), Kurihara et al.
patent: 6624049 (2003-09-01), Yamazaki
patent: 2004/0246587 (2004-12-01), Ozawa
patent: 2009/0176321 (2009-07-01), Park
patent: 2009/0206354 (2009-08-01), Kitano et al.

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