Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2011-01-25
2011-01-25
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S045000, C438S104000, C438S758000, C438S765000, C438S778000, C257SE21461, C257SE21462, C257SE21463
Reexamination Certificate
active
07875559
ABSTRACT:
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
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Chu Hye Yong
Hwang Chi Sun
Lee Jeong Ik
Park Sang Hee
Ahmadi Mohsen
Electronics and Telecommunications Research Institute
Garber Charles D
Ladas & Parry LLP
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