Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
1999-01-04
2001-08-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S250000, C438S253000, C438S486000, C438S770000
Reexamination Certificate
active
06281074
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to a method of manufacturing an oxide layer.
2. Description of the Related Art
Currently, oxide layers are widely used in the semiconductor devices since the oxide layers have a relatively good insulating effect. Applications of oxide layers include an inter-metal dielectric layer between two interconnect layers, isolation structures, gate oxide, a dielectric layer between a floating gate and a controlling gate in an electrically erasable and programmable read-only memory (EEPROM) device, etc.
Conventional oxide layer on the rough surface of a polysilicon layer is formed by thermal oxidation. However the roughness of the polysilicon layer surface is determined by the accumulative directions of the polysilicon lattice during thermal oxidation process. Additionally, the range and the configuration of the polysilicon layer are affected by the temperature when the oxide layer is formed by thermal oxidation procedure. Therefore, it is difficult to produce a properly rough surface of the polysilicon layer.
Currently, the step that the oxide layer is formed on the rough surface of a polysilicon layer is usually present in the method of fabricating an EEPROM device. In order to increase the penetration ability of electrons, it is necessary to roughen the surface of the floating gate of the EEPROM device before the oxide layer between the floating gate and the controlling gate is formed. Because the rough surface of the floating gate can enhance the intensity of the local electric field, the penetration ability of electrons is increased.
SUMMARY OF THE INVENTION
It is therefore an objective of the invention to provide a method of manufacturing an oxide layer to improve the quality and immunity of the oxide layer under high-field operation and increase the life time of the oxide layer.
To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention provides a method of manufacturing an oxide layer. A substrate is provided. An amorphous silicon layer is formed on the substrate. The amorphous silicon layer is recrystallized to form a polysilicon layer. The polysilicon layer is oxidized to form an oxide layer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 5677867 (1997-10-01), Hazani
patent: 6083778 (2000-07-01), Gardner et al.
“Conventional and Rapid Thermal Processes” McGraw-Hill International Editions (ULSI Technology)/C.Y. Chang and S.M. Sze/p. 169-170. 1996.
Estrada Michelle
Fourson George
United Microelectronics Corp.
LandOfFree
Method of manufacturing oxide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing oxide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing oxide layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2495262