Method of manufacturing nonvolatile semiconductor memory devices

Details Method of manufacturing nonvolatile semiconductor memory devices Method of manufacturing nonvolatile semiconductor memory devices

1997-12-17

1999-11-23

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, H01L 218247

Patent

active

059899590

ABSTRACT:
A silicon nitride film and a silicon oxide film are deposited in that order on a WSi film. In a single session of lithography, the gate electrode of a memory cell and the gate electrode of a transistor constituting a peripheral circuit are formed. The silicon oxide film makes a mask used to form a floating gate of the memory cell. The silicon nitride film makes a mask used to form a common source region by etching a gate oxide film and a field oxide film. The silicon nitride film covers the WSi film to prevent impurities from entering the WSi film when impurities are introduced into the common source region. This prevents abnormal oxidation in a subsequent process.

REFERENCES:
patent: 5304503 (1994-04-01), Yoon et al.
patent: 5439838 (1995-08-01), Yang
patent: 5445981 (1995-08-01), Lee
patent: 5635416 (1997-06-01), Chen et al.
patent: 5756385 (1998-05-01), Yuan et al.

Affiliated with

Also associated with

Rating

Method of manufacturing nonvolatile semiconductor memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing nonvolatile semiconductor memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing nonvolatile semiconductor memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1221127