Method of manufacturing nonvolatile semiconductor memory device

Details Method of manufacturing nonvolatile semiconductor memory device Method of manufacturing nonvolatile semiconductor memory device

2011-06-07

2011-06-07

Phung, Anh (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21180, C257SE21210, C257SE21423, C257SE21679, C438S017000, C438S216000

Reexamination Certificate

active

07955933

ABSTRACT:
A method of manufacturing a nonvolatile semiconductor memory device includes the steps of preparing a wafer having multiple memory cells, each memory cell having a gate electrode formed on a semiconductor substrate, charge storage units formed on both sides of the gate electrode, lightly doped regions formed beneath the charge storage units, respectively, in the upper part of the semiconductor substrate, and highly doped regions formed in a pair of regions sandwiching a region underneath the gate electrode and the lightly doped regions in between; erasing data stored in the charge storage units electrically; and treating the wafer at a high temperature for a predetermined period of time.

REFERENCES:
patent: 6307784 (2001-10-01), Hamilton et al.
patent: 6344994 (2002-02-01), Hamilton et al.
patent: 6442074 (2002-08-01), Hamilton et al.
patent: 6456533 (2002-09-01), Hamilton et al.
patent: 6493261 (2002-12-01), Hamilton et al.
patent: 6590811 (2003-07-01), Hamilton et al.
patent: 6687648 (2004-02-01), Kumar et al.
patent: 6800493 (2004-10-01), Chou et al.
patent: 2005/0036366 (2005-02-01), Ono

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