Method of manufacturing nonvolatile semiconductor memory

Details Method of manufacturing nonvolatile semiconductor memory Method of manufacturing nonvolatile semiconductor memory

2007-11-27

2010-12-14

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S316000, C257SE21422

Reexamination Certificate

active

07851305

ABSTRACT:
A method of manufacturing a NAND nonvolatile semiconductor memory which involves forming a bit line contact between adjacent select transistors of the NAND nonvolatile semiconductor memory, the method has patterning memory cells and said select transistors of said NAND nonvolatile semiconductor memory; forming a first insulating film between adjacent two of said memory cells, between said memory cells and said select transistors, and between adjacent two of said select transistors; selectively etching the first insulating film between said select transistors to form a side wall spacer on each of said select transistors; forming a second insulating film on said memory cells, said first insulating film between said memory cells, said select transistors and said side wall spacers; forming a resist pattern on said second insulating film; and simultaneously forming an opening in an insulating film and a control gate on a floating gate of each of said select transistors using said resist pattern and an opening between said adjacent select transistors using said resist pattern.

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