Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-20
2008-08-26
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S257000, C438S593000, C257S315000, C257SE21209, C257SE21422
Reexamination Certificate
active
07416935
ABSTRACT:
A method of manufacturing a nonvolatile semiconductor memory device, including forming a gate insulating film, a first conductive layer providing floating gates and a mask, in that order, on a semiconductor substrate, forming a plurality of element-isolating regions in the mask layer, first conductive layer, gate insulating film and semiconductor substrate; forming first trenches in parts of the first conductive layer separated by the element-isolating region; forming inter-gate insulating films on sides of each floating gate; forming control gates in the first trenches; making second trenches in parts of the mask layer and first conductive layer and in adjacent parts of the element-isolating regions; forming conductive members in the second trenches, wherein a top of the conductive members is at the same level as an upper surface of the mask layer; and removing parts of the first conductive layer and the gate insulating film exclusive of the conductive members.
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Arai Fumitaka
Sakuma Makoto
Huynh Andy
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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