Method of manufacturing nonvolatile memory device

Details Method of manufacturing nonvolatile memory device Method of manufacturing nonvolatile memory device

2011-07-26

2011-07-26

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S248000, C438S259000, C438S261000, C438S263000, C257SE21209, C257SE21662, C257SE21679

Reexamination Certificate

active

07985647

ABSTRACT:
In one embodiment of a method of manufacturing a nonvolatile memory device, a tunnel insulating layer and a charge trap layer are first formed over a semiconductor substrate that defines active regions and isolation regions. The tunnel insulating layer, the charge trap layer, and the semiconductor substrate formed in the isolation regions are etched to form trenches for isolation in the respective isolation regions. The trenches for isolation are filled with an insulating layer to form isolation layers in the respective trenches. A lower passivation layer is formed over an entire surface including top surfaces of the isolation layers. A first oxide layer is formed over an entire surface including the lower passivation layer. Meta-stable bond structures within the lower passivation layer are removed. A nitride layer, a second oxide layer, and an upper passivation layer are sequentially formed over an entire surface including the first oxide layer.

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