Method of manufacturing non-volatile semiconductor storage...

Details Method of manufacturing non-volatile semiconductor storage... Method of manufacturing non-volatile semiconductor storage...

2011-03-08

2011-03-08

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29309

Reexamination Certificate

active

07902023

ABSTRACT:
A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array layer provided on the support layer. The memory cell array layer includes: a first lamination part having first insulation layers and first conductive layers alternately laminated therein; and a second lamination part provided on either the top or bottom surface of the respective first lamination part and laminated so as to form a second conductive layer between second insulation layers. The control circuit layer includes at least any one of: a row decoder driving word lines provided in the memory cell array layer, and a sense amplifier sensing and amplifying a signal from bit lines provided in the memory cell array layer.

REFERENCES:
patent: 2005/0063237 (2005-03-01), Masuoka et al.
patent: 2006/0091556 (2006-05-01), Shigeoka
patent: 2008/0242025 (2008-10-01), Kim et al.
patent: 2008/0258203 (2008-10-01), Happ et al.
patent: 10093083 (1998-04-01), None

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