Method of manufacturing non-volatile semiconductor memory device

Details Method of manufacturing non-volatile semiconductor memory device Method of manufacturing non-volatile semiconductor memory device

1999-07-21

2000-08-15

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438262, 438294, 438295, 438296, 438424, 438430, 438279, 257506, H01L 21336, H01L 2176, H01L 2136, H01L 2710

Patent

active

061035742

ABSTRACT:
In a non-volatile semiconductor memory device making electrical writing and erasing possible, source diffusion layers arranged on a substrate and along at least control gate electrodes have, in one part thereof, inclined portions having an angle larger than an ion implantation angle. According to this, device isolation technique is used to lower the resistance of the source diffusion layer.

REFERENCES:
patent: 4824795 (1989-04-01), Blanchard
patent: 5100814 (1992-03-01), Yamaguchi et al.
patent: 5923063 (1999-07-01), Liu et al.
patent: 5989959 (1999-11-01), Araki
patent: 5998267 (1999-12-01), Bergemont et al.
patent: 6034393 (2000-03-01), Sakamoto et al.
patent: 6037247 (2000-03-01), Anand

Affiliated with

Also associated with

Rating

Method of manufacturing non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2006003