Method of manufacturing non-volatile read only memory

Details Method of manufacturing non-volatile read only memory Method of manufacturing non-volatile read only memory

2005-10-18

2005-10-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C257S315000, C257S316000

Reexamination Certificate

active

06955966

ABSTRACT:
A method of manufacturing a mask ROM for storing quaternary data enables short turn around time, makes refining cell sizes simple, and enables stable reading of data. Gaps are formed between word lines in the memory cell transistors and two diffusion areas in accordance with quaternary write data. A current runs between these diffusion areas only when one of these two areas which is adjacent a gap is used as a drain. Accordingly, quaternary data can be read by a first reading when the first diffusion area is a source and the other diffusion area is a drain, and by reading a second reading when the first diffusion area is used as a drain and the other diffusion area as a source.

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