Method of manufacturing non-volatile memory device using...

Details Method of manufacturing non-volatile memory device using... Method of manufacturing non-volatile memory device using...

2007-04-20

2009-11-17

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S239000, C257S261000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

07618861

ABSTRACT:
Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films therebelow are formed so as to largely face a control gate. The control gate between the separate first and second floating gates faces to the channel region via thin interlayer insulating layer. Therefore, a semiconductor device according to the present invention can inject electrons the charge storage film without causing writing errors in a writing operation, and therefore can increase in reliability thereof, control a writing voltage, prevent loss of the electrons stored in the charge storage film, and reliably apply a bias voltage to a channel region.

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patent: 2003-258128 (2003-09-01), None

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