Method of manufacturing non-volatile memory device

Details Method of manufacturing non-volatile memory device Method of manufacturing non-volatile memory device

2009-07-02

2010-12-14

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C438S259000, C438S589000, C257S315000, C257S330000, C257SE21419

Reexamination Certificate

active

07851311

ABSTRACT:
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel length can be controlled. The non-volatile memory device includes gate lines formed in one direction on a semiconductor substrate in which trenches are formed, wherein the gate lines gap-fill the trenches, a dielectric layer formed between the semiconductor substrate and the gate lines, bit separation insulating layers formed between the semiconductor substrate and the dielectric layer under the trenches, and isolation structures formed by etching the trenches, and the dielectric layer and the semiconductor substrate between the trenches in a line form vertical to the gate lines and gap-filling an insulating layer.

REFERENCES:
patent: 5796141 (1998-08-01), Lin et al.
patent: 6720611 (2004-04-01), Jang
patent: 6743695 (2004-06-01), Lee et al.
patent: 6969686 (2005-11-01), Hsieh et al.
patent: 2004/0245562 (2004-12-01), Hsiao et al.
patent: 2006/0043457 (2006-03-01), Baik
patent: 2006/0127680 (2006-06-01), Tzou et al.
patent: 2006/0216894 (2006-09-01), Parekh et al.
patent: 2007/0077704 (2007-04-01), Nieh
patent: 10-1998-0039618 (1998-08-01), None
patent: 10-1999-0063156 (1999-07-01), None
patent: 10-2001-0020984 (2001-03-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4158560