Method of manufacturing non-volatile memory device

Details Method of manufacturing non-volatile memory device Method of manufacturing non-volatile memory device

2007-09-21

2009-10-20

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S216000, C438S593000, C438S594000

Reexamination Certificate

active

07605067

ABSTRACT:
A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.

REFERENCES:
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 1020050045737 (2005-05-01), None
patent: 1020050121174 (2005-12-01), None
patent: 1020060024189 (2006-03-01), None
English Abstract for Publication No. 1020060024189.
English Abstract for Publication No. 1020050121174.
English Abstract for Publication No. 1020050045737.

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