Method of manufacturing non-volatile memory device

Details Method of manufacturing non-volatile memory device Method of manufacturing non-volatile memory device

2006-12-28

2009-06-30

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C438S287000, C438S581000, C438S583000, C438S630000, C438S655000, C257S316000, C257SE21199, C257SE21200

Reexamination Certificate

active

07553729

ABSTRACT:
A method of manufacturing a non-volatile memory device includes the steps of forming gates respectively having a structure in which a gate insulating layer, a first conductive layer, a dielectric layer, a second conductive layer and a metal-silicide layer are laminated over a semiconductor substrate, annealing the metal-silicide layer at a temperature, which is the same as or lower than an annealing temperature of the dielectric layer, forming a buffer oxide layer on the entire surface, and forming a nitride layer on the buffer oxide layer.

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