Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-19
2007-06-19
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S200000, C438S216000, C438S241000, C438S261000, C438S266000, C438S279000, C438S587000, C438S593000
Reexamination Certificate
active
10447675
ABSTRACT:
A method of forming a non-volatile DRAM includes, in part: forming p-well and an n-well between two trench isolation regions formed in a semiconductor substrate, forming a polysilicon control gate of the non-volatile device disposed in the non-volatile DRAM, forming a first oxide spacer above portions of the body region and adjacent said first control gate, forming gate oxide layers of varying thicknesses above the body region, forming the guiding gate of the non-volatile device and the gate of an associated passgate transistor, forming LDD implant regions of the non-volatile device and the associated pass-gate transistor, forming source/drain regions of the non-volatile device and the associated pass-gate transistor, depositing a dielectric layer over the polysilicon guiding gate of the non-volatile device and the polysilicon gate of the associated passgate transistor, forming polysilicon landing pads, and forming polysilicon vertical walls defining capacitor plates of the non-volatile DRAM capacitor.
REFERENCES:
patent: 4070655 (1978-01-01), Schurmeyer et al.
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4132904 (1979-01-01), Harari
patent: 4193128 (1980-03-01), Brewer
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4462090 (1984-07-01), Iizuka
patent: 5051951 (1991-09-01), Maly et al.
patent: 5065362 (1991-11-01), Herdt et al.
patent: 5396461 (1995-03-01), Fukumoto
patent: 5408115 (1995-04-01), Chang
patent: 5619470 (1997-04-01), Fukumoto
patent: 5646865 (1997-07-01), Matsuo et al.
patent: 5702988 (1997-12-01), Liang
patent: 5703388 (1997-12-01), Wang et al.
patent: 5851881 (1998-12-01), Lin et al.
patent: 5914514 (1999-06-01), Dejenfelt et al.
patent: 5946566 (1999-08-01), Choi
patent: 5966601 (1999-10-01), Ling et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 6091634 (2000-07-01), Wong
patent: 6118157 (2000-09-01), Bergemont
patent: 6175268 (2001-01-01), Merrill
patent: 6222765 (2001-04-01), Nojima
patent: 6232185 (2001-05-01), Wang
patent: 6242774 (2001-06-01), Sung
patent: 6266272 (2001-07-01), Kirihata et al.
patent: 6285576 (2001-09-01), Miwa
patent: 6363011 (2002-03-01), Hirose et al.
patent: 6370058 (2002-04-01), Fukumoto
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6414873 (2002-07-01), Herdt
patent: 6417044 (2002-07-01), Ono
patent: 6426894 (2002-07-01), Hirano
patent: 6451643 (2002-09-01), Komori et al.
patent: 6493262 (2002-12-01), Wald et al.
patent: 6514819 (2003-02-01), Choi
patent: 6532169 (2003-03-01), Mann et al.
patent: 6556487 (2003-04-01), Ratnakumar et al.
patent: 6573130 (2003-06-01), Patelmo et al.
patent: 6624015 (2003-09-01), Patelmo et al.
patent: 6654273 (2003-11-01), Miwa
patent: 6699763 (2004-03-01), Ma et al.
patent: 6717203 (2004-04-01), Wong et al.
patent: 6788573 (2004-09-01), Choi
patent: 6798008 (2004-09-01), Choi
patent: 6838343 (2005-01-01), Hung et al.
patent: 2002/0146886 (2002-10-01), Chern
patent: 2003/0052361 (2003-03-01), Liu et al.
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 2003/0223288 (2003-12-01), Choi
patent: 2004/0057286 (2004-03-01), Chen et al.
patent: 2005/0207199 (2005-09-01), Chen et al.
Choi Kyu Hyun
Li Sheau-suey
Chen Jack
O2IC, Inc.
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