Method of manufacturing nitride semiconductor substrate...

Details Method of manufacturing nitride semiconductor substrate... Method of manufacturing nitride semiconductor substrate...

2011-03-29

2011-03-29

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S486000, C438S493000, C257SE21097

Reexamination Certificate

active

07915150

ABSTRACT:
A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semiconductor layer may be epitaxially grown on the buffer layer. The nitride semiconductor layer may have a (1010) plane. Accordingly, because example embodiments enable the use of a relatively inexpensive Si substrate, a more economical nitride semiconductor substrate having a relatively large diameter may be achieved.

REFERENCES:
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patent: 2003/0133851 (2003-07-01), Kitahara
patent: 2008/0223434 (2008-09-01), Ikenoue et al.
S.B. Aldabergenova et al. “Structure changes of AIN:Ho films with annealing and enhancement of the Ho3+ emission”, 2006, Journal of Non-Crustalline Solids 352 (2006) 1290-1293.

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