Method of manufacturing NAND flash memory device

Details Method of manufacturing NAND flash memory device Method of manufacturing NAND flash memory device

2006-12-28

2010-06-01

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S589000, C438S593000, C257SE21410

Reexamination Certificate

active

07727839

ABSTRACT:
A method of manufacturing a NAND flash memory device is disclosed. A semiconductor substrate of a portion in which a source select line SSL and a drain select line DSL will be formed is recessed selectively or entirely to a predetermined depth. Accordingly, the channel length of a gate can be increased and disturbance can be reduced. It is therefore possible to improve the reliability and yield of devices.

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Translation of First Office Action for corresponding Chinese Patent Application No. 200710001227.8, dated Aug. 15, 2008.

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